| 摘要 |
PROBLEM TO BE SOLVED: To improve the uniformity of a microcrystal film consisting of a silicon germanium based compound, thereby improving the characteristics of a photoelectric conversion device.SOLUTION: A manufacturing method of a photoelectric conversion device includes a step of forming a microcrystal film consisting of a silicon germanium based compound. In the step of forming the microcrystal film consisting of the silicon germanium based compound, a gap G between a deposition face of a first conductive type semiconductor film formed on a substrate located on a first plasma generation electrode in a film formation chamber and an ejection surface of a second plasma generation electrode disposed in the film formation chamber oppositely to the deposition face of the first conductive type semiconductor film and having formed therein gas ejection holes through which at least one of raw material gas and carrier gas is ejected toward the deposition face of the first conductive type semiconductor film is 1/2 times a center to center distance d of the gas ejection holes adjacent to each other in the second plasma generation electrode or more and less than the center to center distance d of the gas ejection holes adjacent to each other. |
