| 摘要 |
PROBLEM TO BE SOLVED: To provide a silver alloy sputtering target for forming a conductive film and splash, and a method for manufacturing the same.SOLUTION: The silver alloy sputtering target has component composition consisting of In of 0.1-1.5 mass% and the balance Ag with inevitable impurities, the average grain size of crystalline grains is ≥30 μm and <150 μm, and dispersion of the grain size of the crystalline grains is ≤20% of the average grain size. The silver alloy sputtering target is manufactured by applying a hot rolling process, a cooling process, and a machining process in this order to a molten cast ingot. The hot rolling process includes one or more passes of the finish hot rolling with a draft per pass of 20-50%, a strain rate of 3-15/sec, and a temperature after the pass of 400-650°C. In the cooling process, the ingot is quenched at the cooling rate of 200-1,000°C/min. |
