| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for polishing a substrate, achieving planarization and a low level of polishing scratches.SOLUTION: A polishing method includes: a step of preparing a substrate on which a film to be polished having a recessed part and a projecting part is formed; a planarization polishing step of polishing the substrate using an abrasive including a cerium oxide so that an average value of a level difference between the films to be polished at the recessed part and the projecting part is reduced to 120 nm or less; and a final polishing step of polishing the substrate using an abrasive including quadrivalent metal hydroxide particles, a medium and a pH adjuster. |
