发明名称 METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To counteract the bending of the crystallization boundary and the loading on a single crystal by thermal stress in a more advantageous way.SOLUTION: There are disclosed a method and an apparatus for producing a single crystal by means of a floating zone method, wherein the single crystal crystallizes with the support of an induction heating coil below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, which are characterized in that the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance &Dgr; between an outer triple point Ta at the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced.
申请公布号 JP2013129591(A) 申请公布日期 2013.07.04
申请号 JP20120276788 申请日期 2012.12.19
申请人 SILTRONIC AG 发明人 GEORG RAMING;ALTMANNSHOFER LUDWIG;GUNDARS RATNIEKS;LANDRICHINGER JOHANN;LOBMEYER JOSEF;HOLZINGER ALFRED
分类号 C30B13/30;C30B13/08;C30B29/06 主分类号 C30B13/30
代理机构 代理人
主权项
地址