SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING SAME, AND COMBINATION OF SEMICONDUCTOR ELEMENTS

摘要

This method for producing a semiconductor element involves: a step for forming a semiconductor layer on a growth substrate with a lift-off layer therebetween; a step for producing multiple semiconductor structures by forming grooves; a step for filling the grooves with a filler; a seed formation step for forming a plating seed layer; a step for forming a net-like resist above the grooves after the seed formation step; a step for forming a conductive support body by forming a plating layer from the plating seed layer that was exposed by not being covered by the resist, the plating layer being formed in a manner such that the conductive support body has a concave on top of the resist and a hole is formed on the intersection site of the resist; a step for removing at least a portion of the filler and the resist; a step for removing the lift-off layer by means of an etching solution for forming a space via the hole; and a step for fragmenting the conductive support body into multiple semiconductor elements by cutting the conductive support body along the concave.