| 摘要 |
PURPOSE: A plasma processing apparatus is provided to raise an electrostatic chuck before a washing process and to reduce a gap between an upper electrode and a lower electrode, thereby increasing the intensity of washing a by-product away. CONSTITUTION: A gas supplying unit(120) supplies reaction gas to a processing chamber(110). An upper electrode(130) is arranged in an upper part within the processing chamber. A lower electrode(140) is arranged in a lower part within the processing chamber. An electrostatic chuck(150) supports a substrate by being arranged between the upper electrode and the lower electrode. A lifting unit(180) raises and lowers the electrostatic chuck.
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