发明名称 |
SEMICONDUCTOR GAS SENSOR AND METHOD FOR MEASURING A RESIDUAL GAS PROPORTION WITH A SEMICONDUCTOR GAS SENSOR |
摘要 |
A semiconductor gas sensor is provided that has a gas-sensitive gate electrode separated by a gap from a channel region and is embodied as a suspended gate field effect transistor or the gate electrode is arranged as a first plate of a capacitor with gap and a second plate of the capacitor is connected to a gate of the field effect transistor embodied as capacitively controlled and the gate electrode has a conductive carrier layer with a bearing adhesion promoter layer and a gas-sensitive layer bearing on the adhesion promoter layer, wherein the gate electrode as a gas-sensitive layer has a platinum/gold alloy with a gold proportion in a range of 1% to 20% and a polymer layer with a thickness of less than 100 nm is embodied on the surface of the platinum/gold alloy and the gap is filled with an oxygen-free gas mixture.
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申请公布号 |
US2013139570(A1) |
申请公布日期 |
2013.06.06 |
申请号 |
US201213683235 |
申请日期 |
2012.11.21 |
申请人 |
MICRONAS GMBH;MICRONAS GMBH |
发明人 |
SENFT CHRISTOPH;SIMON STEFAN;HANSCH WALTER |
分类号 |
H01L29/66;G01N27/00 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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