发明名称 SEMICONDUCTOR GAS SENSOR AND METHOD FOR MEASURING A RESIDUAL GAS PROPORTION WITH A SEMICONDUCTOR GAS SENSOR
摘要 A semiconductor gas sensor is provided that has a gas-sensitive gate electrode separated by a gap from a channel region and is embodied as a suspended gate field effect transistor or the gate electrode is arranged as a first plate of a capacitor with gap and a second plate of the capacitor is connected to a gate of the field effect transistor embodied as capacitively controlled and the gate electrode has a conductive carrier layer with a bearing adhesion promoter layer and a gas-sensitive layer bearing on the adhesion promoter layer, wherein the gate electrode as a gas-sensitive layer has a platinum/gold alloy with a gold proportion in a range of 1% to 20% and a polymer layer with a thickness of less than 100 nm is embodied on the surface of the platinum/gold alloy and the gap is filled with an oxygen-free gas mixture.
申请公布号 US2013139570(A1) 申请公布日期 2013.06.06
申请号 US201213683235 申请日期 2012.11.21
申请人 MICRONAS GMBH;MICRONAS GMBH 发明人 SENFT CHRISTOPH;SIMON STEFAN;HANSCH WALTER
分类号 H01L29/66;G01N27/00 主分类号 H01L29/66
代理机构 代理人
主权项
地址