发明名称 |
SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING |
摘要 |
A method of forming a semiconductor substrate including forming a base layer of a Group 13-15 material on a growth substrate during a growth process, forming a mask having mask regions and gap regions overlying the base layer during the growth process, and preferentially removing a portion of the base layer underlying the mask during the growth process.
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申请公布号 |
US2013143394(A1) |
申请公布日期 |
2013.06.06 |
申请号 |
US201213681119 |
申请日期 |
2012.11.19 |
申请人 |
SAINT-GOBAIN CERAMICS & PLASTICS, INC.;SAINT-GOBAIN CERAMICS & PLASTICS, INC. |
发明人 |
FAURIE JEAN-PIERRE;BEAUMONT BERNARD |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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