LATERAL DOUBLE DIFFUSION METAL-OXIDE_SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A LDMOS(Lateral Double diffusion Metal-Oxide-Semiconductor) device and a manufacturing method thereof are provided to reduce an on-resistance in a forward operation by increasing the doping density of an n-drift region. CONSTITUTION: An n-drift region(12) is formed on a p-type substrate(10). A p-body(14) is formed on one side of the upper side of the n-drift region. A p-epitaxial layer(16) is formed on the other side of the upper side of the n-drift region. A source electrode(28) is formed on an n+ source(18) and a p+ source(20). A gate oxide layer(26) is formed on the trench part of a field oxide layer(24). A drain electrode(30) is formed on an n+ drain(22).