发明名称 SEMICONDUCTOR JUNCTION ELEMENT, SEMICONDUCTOR DEVICE USING IT, AND MANUFACTURING METHOD OF SEMICONDUCTOR JUNCTION ELEMENT
摘要 In order to provide a semiconductor junction element consisted of an oxide semiconductor glass, which does not contain a toxic element and rare metal element, and various semiconductor devices using it, semiconductor glasses which contain vanadium oxide and have different polarities are connected each other in a semiconductor junction element of the present invention. Moreover, a semiconductor glass containing vanadium oxide is connected to an element semiconductor or a compound semiconductor which have different polarity from the semiconductor glass. Furthermore, a semiconductor glass containing vanadium oxide is connected to a metal.
申请公布号 US2013126864(A1) 申请公布日期 2013.05.23
申请号 US201113813592 申请日期 2011.09.02
申请人 FUJIEDA TADASHI;NAITO TAKASHI;AOYAGI TAKUYA;YAMAMOTO HIROKI;MIYATA MOTOYUKI;HITACHI, LTD. 发明人 FUJIEDA TADASHI;NAITO TAKASHI;AOYAGI TAKUYA;YAMAMOTO HIROKI;MIYATA MOTOYUKI
分类号 H01L29/24;H01L21/02 主分类号 H01L29/24
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