发明名称 |
SEMICONDUCTOR JUNCTION ELEMENT, SEMICONDUCTOR DEVICE USING IT, AND MANUFACTURING METHOD OF SEMICONDUCTOR JUNCTION ELEMENT |
摘要 |
In order to provide a semiconductor junction element consisted of an oxide semiconductor glass, which does not contain a toxic element and rare metal element, and various semiconductor devices using it, semiconductor glasses which contain vanadium oxide and have different polarities are connected each other in a semiconductor junction element of the present invention. Moreover, a semiconductor glass containing vanadium oxide is connected to an element semiconductor or a compound semiconductor which have different polarity from the semiconductor glass. Furthermore, a semiconductor glass containing vanadium oxide is connected to a metal.
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申请公布号 |
US2013126864(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201113813592 |
申请日期 |
2011.09.02 |
申请人 |
FUJIEDA TADASHI;NAITO TAKASHI;AOYAGI TAKUYA;YAMAMOTO HIROKI;MIYATA MOTOYUKI;HITACHI, LTD. |
发明人 |
FUJIEDA TADASHI;NAITO TAKASHI;AOYAGI TAKUYA;YAMAMOTO HIROKI;MIYATA MOTOYUKI |
分类号 |
H01L29/24;H01L21/02 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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