发明名称 MANUFACTURING METHOD OF POLYCRYSTALLINE SILICON
摘要 <P>PROBLEM TO BE SOLVED: To provide the technique in which the efficient heating of a silicon core wire is achieved when manufacturing polycrystalline silicon by a Siemens method, thereby the damage to the silicon core wire is reduced, and the life of a carbon heater can be extended. <P>SOLUTION: The furnace pressure is lowered to a given value once after a hydrogen gas airtight test is completed, and the silicon core wire is performed with energization heating under the furnace pressure that is lower than the pressure at a precipitation reaction process of polycrystalline silicon. The bulk temperature of the silicon core wire 12 is decided by the balance of the radiant heat amount from a carbon heater 14, the convective heat transfer amount to an atmospheric gas from the silicon core wire 12, the conductive heat transfer amount to a silicon core wire holder, and the radiant heat amount or the like to a bell jar 1 and a base plate 5, the bulk temperature of the silicon core wire 12 rises if the heat output amount decreases even if the heat input amount is invariable. In the present invention, the furnace pressure at the initial heating process time is set lower the pressure at the polycrystalline silicon precipitation reaction process time to control the calorie deprived from the surface of the silicon core wire 12 by the convection. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013100211(A) 申请公布日期 2013.05.23
申请号 JP20110246071 申请日期 2011.11.10
申请人 SHIN-ETSU CHEMICAL CO LTD 发明人 KUROSAWA YASUSHI;NEZU SHIGEYOSHI
分类号 C01B33/035;C01B33/02 主分类号 C01B33/035
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