| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a coating material for formation of a porous metal oxide semiconductor film of a photoelectric cell which exhibits a high photoelectric conversion efficiency from the beginning of use. <P>SOLUTION: The coating material for formation of a porous metal oxide semiconductor film comprises: metal oxide particles; an organic compound including at least one selected from an acyl group, an aroyl group, an acyloxy group, an aroyloxy group, and a carboxylate group (carboxyl group or an ester thereof); and a dispersant. The concentration (C<SB POS="POST">MOP</SB>) of the metal oxide particles is in a range of 1-30 wt.% as a solid content. The concentration (C<SB POS="POST">OC</SB>) of the organic compound is in a range of 0.05-5 wt.%. The concentration ratio (C<SB POS="POST">OC</SB>)/(C<SB POS="POST">MOP</SB>) of the concentration (C<SB POS="POST">OC</SB>) of the organic compound and the concentration (C<SB POS="POST">MOP</SB>) of the metal oxide particles is in a range of 0.001-0.5. <P>COPYRIGHT: (C)2013,JPO&INPIT |
