ORGANIC-INORGANIC NANOHYBRID NON-VOLATILE MEMORY CAPACITOR, ORGANIC-INORGANIC NANOHYBRID NON-VOLATILE MEMORY TRANSISTOR, AND PREPARING METHOD OF THE SAME

摘要

PURPOSE: An organic-inorganic nanohybrid non-volatile memory capacitor, an organic-inorganic nanohybrid non-volatile memory transistor, and a method for manufacturing the same are provided to secure an organic-inorganic nanohybrid thin film with high uniformity, excellent reproductivity and quantity. CONSTITUTION: A source electrode(110) and a drain electrode(120) are formed on a base(100). The source electrode is separated from the drain electrode. A semiconductor channel layer(130) is formed on the source electrode and between the drain electrode and the base. An organic-inorganic nanohybrid tunneling layer(140) is formed on the semiconductor channel layer. A charge trapping layer(150) is formed on the organic-inorganic nanohybrid tunneling layer. An organic-inorganic nanohybrid insulating layer(160) is formed on the charge trapping layer. A gate electrode(180) is formed on the organic-inorganic nanohybrid insulating layer.