| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device which improves the resistance against impurities and the like from the exterior, and to obtain a manufacturing method of the semiconductor device. <P>SOLUTION: A lower layer wiring 2 is provided on a GaAs substrate 1. A resin film 4 is provided on the GaAs substrate 1 and the lower layer wiring 2. The resin film 4 has an opening 5 on the lower layer wiring 2. An SiN film 6 is provided on the lower layer wiring 2 and the resin film 4. The SiN film 6 has an opening 7 in the opening 5. Upper layer wiring 8 is provided on parts of the lower layer wiring 2 and the resin film 4. The upper wiring 8 has a Ti film 8a which connects with the lower layer wiring 2 through the openings 5, 7 and an Au film 8b provided on the Ti film 8a. An SiN film 9 is provided on the upper layer wiring 8 and the resin film 4. The SiN film 9 adheres to the SiN film 6 on the resin film 4. The SiN films 6, 9 protect around the Ti film 8a. <P>COPYRIGHT: (C)2013,JPO&INPIT |
