| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a double flip-chip semiconductor device formed by a double flip fabrication process. <P>SOLUTION: Epitaxial layers are grown on a substrate in the normal fashion with n-type layers 204 grown first and p-type layers 206 grown subsequently. The chip is flipped a first time and mounted to a sacrificial layer. The original substrate is removed to expose the n-type layer, and additional layers and treatments are added to the device. Because the n-type layer is exposed during fabrication, the layer may be processed in various ways to improve light extraction. The chip is flipped a second time and mounted to a support element. The sacrificial layer is then removed and additional layers and treatments are added to the device. The finished device features a configuration in which the layers maintain the same orientation with respect to the support element that they had with the original substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
