发明名称 RETICLE FOR EXPOSURE, EXPOSURE METHOD AND PRODUCTION METHOD OF SEMICONDUCTOR WAFER
摘要 <P>PROBLEM TO BE SOLVED: To utilize a high resolution region in a most effective manner and improve throughput by increasing the number of chip patterns per shot and fitting reticle patterns with each other without space therebetween without complicating the step feeding. <P>SOLUTION: In a reticle 2 for exposure where a reticle pattern 22 constituted of a plurality of chip patterns 21 is placed in a circular effective exposure region 23 of a stepper apparatus 10, the reticle pattern 22 has 12 chip patterns 21 where chip patterns at four corners are taken out from 4&times;4 or 16 chip patterns 21, or in another point of view, where chip patterns 21 protrude from all four sides of the reticle pattern 22 constituted of 2&times;2 or 4 chip patterns 21, with two chip patterns 21 protruding to each of the top and bottom and also two chip patterns 21 protruding to each of the left and right. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013080196(A) 申请公布日期 2013.05.02
申请号 JP20120023454 申请日期 2012.02.06
申请人 SHARP CORP 发明人 SHIMIZU HIRONOBU
分类号 G03F1/68;G03F7/20;H01L21/027 主分类号 G03F1/68
代理机构 代理人
主权项
地址