发明名称 Methods of providing semiconductor layers from amic acid salts
摘要 A semiconductor layer and device can be provided using a method including thermally converting an aromatic, non-polymeric amic acid salt to a corresponding arylene diimide. The semiconducting thin films can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the salt acts as an internal catalyst.
申请公布号 US8431433(B2) 申请公布日期 2013.04.30
申请号 US20100788349 申请日期 2010.05.27
申请人 SHUKLA DEEPAK;MEYER DIANNE M.;AHEARN WENDY G.;EASTMAN KODAK COMPANY 发明人 SHUKLA DEEPAK;MEYER DIANNE M.;AHEARN WENDY G.
分类号 H01L51/40 主分类号 H01L51/40
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