SI QUANTUM DOT SOLAR CELLS BY SB AND INP DOPING AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: Si quantum dot solar cells by Sb and InP doping and a method for manufacturing the same are provided to optimize quantum dots by systematically controlling a doping process. CONSTITUTION: A silicon oxide film(20) is deposited on a p-type silicon substrate(10). Si quantum dots(40) are uniformly distributed on the silicon oxide film. An Al electrode(50) is formed on the outer surface of the p-type silicon substrate. The Al electrode(50') is formed on the outer surface of the silicon oxide film. Two Al electrodes are formed by depositing Al.