| 摘要 |
Methods of manufacturing a semiconductor device are provided. Patterns having a recess region defined therebetween are formed on a substrate, and then a silicon precursor having an organic ligand is provided on the substrate to absorb silicon on sidewalls and a bottom surface of the recess region to form a silicon monolayer on the patterns having the recess region defined therebetween. A silicon layer without void and cutting is formed on the silicon monolayer.
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