| 摘要 |
A method for manufacturing a capacitor of a semiconductor device is provided to improve a contact resistance and to secure easily characteristics of a lower electrode by forming an adhesive layer only on a contact surface between a titanium nitride lower electrode and a contact plug. A semiconductor substrate supply process is performed to supply a semiconductor substrate(101) having a predetermined structure including a contact plug. A tungsten film forming process is performed to form selectively the tungsten film only on the contact plug by receiving a tungsten material gas. A lower electrode is formed to be electrically connected with the tungsten film. A dielectric layer and an upper electrode(117) are formed on an entire structure including the lower electrode. A thermal process is performed to change the tungsten film to a tungsten silicide film(114). |
