发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY ELEMENT |
摘要 |
A semiconductor memory element for writing by a drain-avalanche hot electron includes a MOS transistor having a first semiconductor layer of a second conductivity type formed on a semiconductor substrate of a first conductivity type; a floating gate provided on the first semiconductor layer through intermediation of an insulating film; a channel region formed in a surface of the first semiconductor layer under the floating gate; and a source region and a drain region of the first conductivity type provided on the first semiconductor layer so as to be in contact with the channel region in which the channel region has a distribution of at least two kinds of carrier densities. |
申请公布号 |
US2013082317(A1) |
申请公布日期 |
2013.04.04 |
申请号 |
US201213628135 |
申请日期 |
2012.09.27 |
申请人 |
KOBAYASHI NAOTO;TSUMURA KAZUHIRO |
发明人 |
KOBAYASHI NAOTO;TSUMURA KAZUHIRO |
分类号 |
H01L29/788;H01L27/088 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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