METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

PURPOSE: A method for manufacturing a semiconductor device, and a substrate processing apparatus are provided to form an electrode which prevents or suppresses the deterioration of a work function and conductivity by high oxidation resistance. CONSTITUTION: A substrate(300) with a gate insulation layer(302) or a capacitor insulation layer is inputted to a processing chamber. A conductive oxide layer(316) including a ZnO layer(312) and a Ga2O3 layer(314) is formed on the substrate. An additive is added to the conductive oxide layer to change a work function of the conductive oxide layer. A conductive oxide layer forming process and an additive adding process are alternatively repeated several times. The substrate with an electrode is outputted from the processing chamber. [Reference numerals] (300) Silicon substrate; (302) Gate insulation layer;