SEMICONDUCTOR TEST STRUCTURES

摘要

PURPOSE: A semiconductor test structure is provided to secure a reliable index by sensing a change in a wafer level process which affects a gate electrode and a dielectric layer. CONSTITUTION: An active region(230) and an STI(220) are formed on a substrate(210). An isolation characteristic part includes a low trench isolation characteristic part and the STI. A dielectric layer(240) is arranged on the substrate. A doped source/drain region(250) is formed in the active region. A gate spacer(260) is formed by performing a dielectric deposition and a dry etching process. [Reference numerals] (230) N well of P well;