发明名称 |
Memory array with distributed clear transistors and variable memory element power supply |
摘要 |
Memory elements may be provided that include bi-stable data storage elements based on cross-coupled inverters. A pair of address transistors may be used to implement a differential data writing scheme for the memory elements. One of the address transistors may be coupled between a first data line and a first data storage node in each memory element and another of the address transistors may be coupled between a second data line and a second data storage node. A read circuit may be coupled to the second data storage node. Clear transistors may be interspersed through the array. The clear transistors may help pull the data lines to desired voltages during clear operations. An adjustable power supply may supply a weakened power supply voltage to a pull-up clear transistor and to the first and second inverters during clear operations.
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申请公布号 |
US8411491(B1) |
申请公布日期 |
2013.04.02 |
申请号 |
US20110983816 |
申请日期 |
2011.01.03 |
申请人 |
LIU LIN-SHIH;CHAN MARK T.;ALTERA CORPORATION |
发明人 |
LIU LIN-SHIH;CHAN MARK T. |
分类号 |
G11C11/00;G11C7/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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