| 摘要 |
[Problem] To provide a crystalline transparent conductive film having a high transmittance of at least 98% in the visible wavelengths (400-800 nm) and a specific resistance of no greater than 5×10-3 Omega·cm, even resulting from film formation at a low substrate temperature of no greater than 150°C. [Solution] The transparent conductive film is obtained by means of film formation with the sputtering target being an oxide sintered body such that Sn/In is 0.019-0.102, In/(In+Sn+Co) is 0.771-0.967, Sn/(In+Sn+Co) is 0.016-0.091, Co/(In+Sn+Co) is 0.015-0.15, the relative density is at least 98%, and the specific resistance is no greater than 5×10-3 Omega·cm. |
