发明名称 |
HIGH THROUGHPUT EPITAXIAL LIFT OFF FOR FLEXIBLE ELECTRONICS |
摘要 |
A method of removing a semiconductor device layer from an underlying base substrate is provided in which a sacrificial phosphide-containing layer is formed between a semiconductor device layer and a base substrate. In some embodiments, a semiconductor buffer layer can be formed on an upper surface of the base substrate prior to forming the sacrificial phosphide-buffer layer. The resultant structure is then etched utilizing a non-HF etchant to release the semiconductor device layer from the base semiconductor substrate. After releasing the semiconductor device layer from the base substrate, the base substrate can be re-used. |
申请公布号 |
US2013071999(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
US201113236119 |
申请日期 |
2011.09.19 |
申请人 |
CHENG CHENG-WEI;SHIU KUEN-TING;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG CHENG-WEI;SHIU KUEN-TING |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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