| 摘要 |
A resistance change memory includes a first conductive line extending in a first direction, a second conductive line extending in a second direction which is crossed to the first direction, a cell unit including a memory element and a rectifying element connected in series between the first and second conductive lines, and a control circuit which is connected to both of the first and second conductive lines. The control circuit controls a voltage to change a resistance of the memory element between first and second values reversibly. The rectifying element is a diode including an anode layer, a cathode layer and an insulating layer therebetween.
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