| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an improved semiconductor device to secure the protection of a power semiconductor element. <P>SOLUTION: A semiconductor device 10, known as an intelligent power module (IPM), internally includes power semiconductor elements 12a-12f. The semiconductor device 10 also includes an HVIC 20 and an LVIC 30, The HVIC, high breakdown voltage IC, 20 is a driver IC for driving the power semiconductor elements 12a, 12b and 12c on the high side. The LVIC, low breakdown voltage IC, 30 is a driver IC for driving the power semiconductor elements 12d, 12e and 12f on the low side. The HVIC 20 includes an Fo input terminal. In response to the input of an abnormal signal from the LVIC 30 to the Fo input terminal, the HVIC 20 receiving the signal switches off the power semiconductor elements 12a, 12b and 12c. <P>COPYRIGHT: (C)2013,JPO&INPIT |
