| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method which can stably form a groove having a desired depth and a narrow width in a semiconductor substrate. <P>SOLUTION: A method for manufacturing a semiconductor device comprises forming a first oxygen-containing region 24 by performing an oxygen ion implantation to a portion of a semiconductor substrate 10, and oxidizing the first oxygen-containing region 24 using oxygen contained in the first oxygen-containing region 24 by performing a thermal processing to the semiconductor substrate 10, to convert the first oxygen-containing region 24 to a first oxide region 26. The method further comprises forming a groove 16 in the semiconductor substrate 10 by eliminating the first oxide region 26. <P>COPYRIGHT: (C)2013,JPO&INPIT |
