| 摘要 |
<p>Disclosed is a method for manufacturing a semiconductor device, which comprises: a step wherein a resist layer (13) is formed on a substrate (11); a step wherein a resist pattern is formed by subjecting the resist layer to light exposure and development; a slimming step wherein the resist pattern is narrowed; a step wherein a masking material layer is formed on the lateral wall portion of the narrowed resist pattern; and a step wherein the narrowed resist pattern is removed. The slimming step comprises: a coating step (c) wherein an expansive agent (14) is applied to the substrate; a step (d) wherein the expansive agent is expanded; and a step (f) wherein the expanded expansive agent is removed.</p> |
