发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME |
摘要 |
A semiconductor device and a manufacturing method for the same are provided. The semiconductor device comprises a first doped region, a second doped region, a dielectric structure and a gate structure. The first doped region has a first type conductivity. The second doped region has a second type conductivity opposite to the first type conductivity and is adjacent to the first doped region. The dielectric structure comprises a first dielectric portion and a second dielectric portion separated from each other. The dielectric structure is formed on the first doped region. The gate structure is on a part of the first doped region or second doped region adjacent to the first dielectric portion. |
申请公布号 |
US2013056824(A1) |
申请公布日期 |
2013.03.07 |
申请号 |
US201113225189 |
申请日期 |
2011.09.02 |
申请人 |
CHU CHIEN-WEN;CHAN WING-CHOR;WU SHYI-YUAN;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHU CHIEN-WEN;CHAN WING-CHOR;WU SHYI-YUAN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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