| 摘要 |
<p>PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to easily form a transistor in the device and reliably connect a wire to the transistor. CONSTITUTION: An interlayer dielectric film(112), a first electrode, a second electrode, and a third electrode are formed on a semiconductor substrate(111). The first electrode and the second electrode are extended in a second direction(D2). The first electrode is electrically connected to the second electrode with a bit line(331-333). The first electrode and the second electrode are contacted with a bit line contact(320). The third electrode is extended in a first direction(D1).</p> |
