ROOM-TEMPERATURE OPERATING DUAL-GATE SINGLE-ELECTRON DEVICE SYSTEM

摘要

PURPOSE: A dual gate single electron device system operating at room temperature is provided to efficiently control the potential of a quantum dot by minimizing the influence of a dual gate on a tunneling barrier. CONSTITUTION: A first dielectric layer with a preset thickness is formed on a buried oxide layer(100). A top silicon layer(200) with a preset thickness is exposed by removing a part of the first dielectric layer and the top silicon layer. An etch mask(400) is formed to partially cover the exposed top silicon layer. A nanoline structure is formed by etching the top silicon layer. A thermal oxide layer(210) is formed on the surface of the top silicon layer using a thermal oxidation process.