| 摘要 |
PURPOSE:To restrict the formation of parasitic transistor by a method wherein, when an n type region is diffusionformed on a p type Si substrate and a p<+> type region is provided on the n type region to constitute a transistor while an n<+> type region is formed on the adjoining substrate to constitute another transistor as C-MOS.LSI, another p<+> type region is provided underneath a part of the n<+> type region. CONSTITUTION:An n type region 5 is diffusion-formed on a p type Si substrate 11 and a p<+> type region 3 is provided on the n type region 5 to constitute a transistor. Besides an n<+> type region 2 is provided on the distant part of the substrate 11 to constitute another transistor. Then overall surface is covered with an SiO2 film 1 to make specified openings coating the regions 2, 3 and the surface of film 1 between the region 2 and 3 respectively with Al electrodes, 7, 8 and 9. In such a constitution, a p<+> type region 3' is additionally provided underneath a part of the region 2 toward the region 5 to reduce parasitic transistors T1, T21 and T22 constituted in the respective region. |
