| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, by which a region that can be patterned in a predetermined layer formed on a substrate can be maintained to the maximum and a device with high accuracy can be manufactured. <P>SOLUTION: A process of forming a gate wiring line of a TFT substrate is carried out through the following steps (a) and (b). Step (a): a resist pattern 11 for gate wiring is obtained by exposing exposure regions RA1 and RA2 on a predetermined resist by successively using two reticles and then developing the resist. In this step, a pattern 7 for position correction comprising recesses 7a to 7c is also formed in a part of the resist pattern 11 for gate wiring in an overlapping region DA1 of the exposure regions RA1 and RA2. Step (b): a gate wiring line and a capacitor wiring line are obtained by patterning a wiring material of a base by using the resist pattern 11 for gate wiring obtained in Step (a). <P>COPYRIGHT: (C)2013,JPO&INPIT |
