| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable patterning method of a conductive film. <P>SOLUTION: In the patterning method of a conductive film, a conductive film 21 is deposited on a substrate 10, plasma ashing is carried out by plasmatizing oxygen before laminating other layer on the surface of the conductive film 21, and a mask pattern 30 for patterning the conductive film 21 is formed on the conductive film 21 subjected to surface treatment. Subsequently, the conductive film 21 is subjected to wet etching by using the mask pattern 30 and patterned. The substrate 10 is preferably a semiconductor substrate. The conductive film pattern is an interconnection, an electrode pad, or the like. <P>COPYRIGHT: (C)2013,JPO&INPIT |
