| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce variation in temperature caused by layout obtained by lamp anneal. <P>SOLUTION: A semiconductor device 10 comprises: a substrate 100; element isolation regions 200 buried in the substrate 100; and an impurity layer (extension region 322, source region 324, extension region 342 and drain region 344) formed in regions other than the element isolation regions 200. The element isolation region 200 includes a light absorption layer 220 formed by a material having a light absorption coefficient larger than that of SiO<SB POS="POST">2</SB>within a wavelength range of not less than 300 nm and not more than 890 nm, for example. <P>COPYRIGHT: (C)2013,JPO&INPIT |
