发明名称 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT
摘要 An electrostatic discharge protection circuit is located between a first voltage terminal and a second voltage terminal. The electrostatic discharge protection circuit includes a first semiconductor switch and a second semiconductor switch. The first semiconductor switch is electrically connected to the first voltage terminal. If a voltage at the first voltage terminal complies with a starting condition, the first semiconductor switch is turned on, so that an electrostatic discharge current flows through the first voltage terminal and the first semiconductor switch. The second semiconductor switch is electrically connected between the first semiconductor switch and the second voltage terminal, wherein the electrostatic discharge current from the first semiconductor switch passes to the second voltage terminal through the second semiconductor switch.
申请公布号 US2013027821(A1) 申请公布日期 2013.01.31
申请号 US201113190578 申请日期 2011.07.26
申请人 UNITED MICROELECTRONICS CORP.;CHEN LU-AN;LAI TAI-HSIANG;TANG TIEN-HAO 发明人 CHEN LU-AN;LAI TAI-HSIANG;TANG TIEN-HAO
分类号 H02H9/04 主分类号 H02H9/04
代理机构 代理人
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