| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve bonding reliability of joint portions between various electrodes containing Cu, Ni and Al of a semiconductor device and a bonding material consisting of metal oxide particles as a main material for bonding. <P>SOLUTION: A semiconductor module having a semiconductor element and electrodes connected together through a bonding layer made of an Ag-based or Cu-based material is characterized in that a thin film of the same kind as the bonding layer is formed on an interface between the semiconductor element and bonding layer and an interface between the bonding layer and electrodes, the thin film having thickness of 1 to 200 nm. Further, the semiconductor element and electrodes are bonded together through a two-stage heat treatment wherein a heat treatment is carried out at temperature below the reduction temperature of the bonding material and then at temperature higher than the reduction temperature. <P>COPYRIGHT: (C)2010,JPO&INPIT |
