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发明名称
Semiconductor material
摘要
A semiconductor device which comprises a channel layer formed from a semiconductor channel component material in the form of crystalline micro particles, micro rods, crystalline nano particles, or nano rods, and doped with a semiconductor dopant.
申请公布号
US8362479(B2)
申请公布日期
2013.01.29
申请号
US20110986535
申请日期
2011.01.07
申请人
PANASONIC CORPORATION;CAMBRIDGE ENTERPRISE LTD.;MORI KIYOTAKA;SIRRINGHAUS HENNING
发明人
MORI KIYOTAKA;SIRRINGHAUS HENNING
分类号
H01L29/10
主分类号
H01L29/10
代理机构
代理人
主权项
地址
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