MANUFACTURING METHOD OF CMOS DEVICE ON DISTORTED SILICON ON GLASS

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a CMOS device on distorted silicon on a glass substrate. SOLUTION: The method comprises of: preparing the glass substrate including a formation of a distorted silicon layer on the glass substrate (12); forming a silicon oxide layer by a plasma oxidation of the distorted silicon layer (14); depositing a dope duopoly silicon layer on the silicon oxide layer (16); performing ion implantation for forming LDD structure by forming a polysilicon gate (18); forming a space dielectric in deposition on the gate structure (20); activating by performing the ion implantation for forming a source and drain structure (22); depositing a layer of metal film; annealing the layer of metal film for forming salicide on the source, drain and gate structure; removing all metal films not reacted yet; depositing an interlayer dielectric layer; and performing metallize by forming a contact hole (24). COPYRIGHT: (C)2006,JPO&NCIPI