| 摘要 |
PURPOSE: A light emitting device package is provided to obtain high output by removing stress due to a thermal expansion coefficient difference between a substrate and a light emitting structure. CONSTITUTION: A first light emitting structure(10) is formed on one side of a substrate(2) and includes a first semiconductor layer(12), a first active layer(15), and a second semiconductor layer(17). The first light emitting structure is electrically connected to a first positive electrode(211b) and a first negative electrode(211a). A second light emitting structure(20) is formed on the other side of the substrate. The second light emitting structure includes a third semiconductor layer(22), a second active layer(25), and a fourth semiconductor layer(27) and is electrically connected to a second positive electrode(212b) and a second negative electrode(212a).
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