| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory device which has a small occupied area of a memory cell or a memory device which has a small occupied area of the memory cell and an extremely long data retention period. <P>SOLUTION: A memory device has: a bit line; a capacitive element; a first insulation layer having a groove part provided on the bit line; a semiconductor layer having one part electrically connecting with the bit line at a bottom part of the groove part and the other part electrically contacting with one electrode of the capacitive element on an upper surface of the first insulation layer; a second insulation layer contacting with the semiconductor layer; and a word line contacting with the second insulation layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
