| 摘要 |
A polishing pad forms a planar surface on glass, semiconductors, dielectric material/metal composites and integrated circuits, as well as a polishing apparatus where it is difficult for the surface of the substrate to be scratched, the state of polishing can be accurately measured optically during polishing, and whether or not the entire surface of the workpiece is uniformly polished can be measured. The polishing pad includes a through hole that connects the polishing surface and the rear surface in such a location as to pass through the center of the wafer during polishing, the end of the through hole closer to the center of the polishing pad is at a distance of no less than 35% of the radius from the center of the polishing pad, the length of the through hole in the direction of the center of the polishing pad is the same as or shorter than the length in the direction perpendicular to the direction of the center of the polishing pad, the length of the through hole in the direction of the center of the polishing pad is no more than 10% of the radius, and the length of the through hole in the direction perpendicular to the direction of the center of the polishing pad is no more than 12.5% of the radius.
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