发明名称 INTEGRATED CIRCUIT DEVICE AND METHOD OF IMPLEMENTING POWER GATING WITHIN AN INTEGRATED CIRCUIT DEVICE
摘要 An integrated circuit device (200) comprises at least one power gating arrangement (205). The at least one power gating arrangement (205) comprises at least one gated power domain (210), and at least one power gating component (220) operably coupled between at least one node (215) of the at least one gated power domain (210) and at least a first power supply node (202). The at least one power gating component (220) is arranged to selectively couple the at least one node (215) of the at least one gated power domain (210) to the at least first power supply node (202). The at least one power gating arrangement (205) further comprises at least one isolation component (240) operably coupled, for example in series, between at least one chargeable device, for example a capacitance (230) and the at least one node (215) of the at least one gated power domain (210), the at least one isolation component (240) being arranged to selectively couple the at least one capacitance (230) to the at least one node (215) of the at least one gated power domain (210).
申请公布号 WO2012172390(A1) 申请公布日期 2012.12.20
申请号 WO2011IB52602 申请日期 2011.06.15
申请人 FREESCALE SEMICONDUCTOR, INC.;SOFER, SERGEY;NEIMAN, VALERY;PRIEL, MICHAEL 发明人 SOFER, SERGEY;NEIMAN, VALERY;PRIEL, MICHAEL
分类号 G05F3/00;G05F1/565 主分类号 G05F3/00
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