发明名称 Hard mask for thin film resistor manufacture
摘要 Methods of fabricating an integrated circuit device, such as a thin film resistor, are disclosed. An exemplary method includes providing a semiconductor substrate; forming a resistive layer over the semiconductor substrate; forming a hard mask layer over the resistive layer, wherein the hard mask layer includes a barrier layer over the resistive layer and a dielectric layer over the barrier layer; and forming an opening in the hard mask layer that exposes a portion of the resistive layer.
申请公布号 US8334187(B2) 申请公布日期 2012.12.18
申请号 US20100824495 申请日期 2010.06.28
申请人 CHANG LI-WEN;YEH DER-CHYANG;YU CHUNG-YI;KUANG HSUN-CHUNG;TSENG HUA-CHOU;CHAO CHIH-PING;LIU MING CHYI;TSENG YUAN-TAI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHANG LI-WEN;YEH DER-CHYANG;YU CHUNG-YI;KUANG HSUN-CHUNG;TSENG HUA-CHOU;CHAO CHIH-PING;LIU MING CHYI;TSENG YUAN-TAI
分类号 H01L21/20 主分类号 H01L21/20
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