发明名称 |
Hard mask for thin film resistor manufacture |
摘要 |
Methods of fabricating an integrated circuit device, such as a thin film resistor, are disclosed. An exemplary method includes providing a semiconductor substrate; forming a resistive layer over the semiconductor substrate; forming a hard mask layer over the resistive layer, wherein the hard mask layer includes a barrier layer over the resistive layer and a dielectric layer over the barrier layer; and forming an opening in the hard mask layer that exposes a portion of the resistive layer. |
申请公布号 |
US8334187(B2) |
申请公布日期 |
2012.12.18 |
申请号 |
US20100824495 |
申请日期 |
2010.06.28 |
申请人 |
CHANG LI-WEN;YEH DER-CHYANG;YU CHUNG-YI;KUANG HSUN-CHUNG;TSENG HUA-CHOU;CHAO CHIH-PING;LIU MING CHYI;TSENG YUAN-TAI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG LI-WEN;YEH DER-CHYANG;YU CHUNG-YI;KUANG HSUN-CHUNG;TSENG HUA-CHOU;CHAO CHIH-PING;LIU MING CHYI;TSENG YUAN-TAI |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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