发明名称 High-Throughput Printing of Semiconductor Precursor Layer from Nanoflake Particles
摘要 Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.
申请公布号 US2012315722(A1) 申请公布日期 2012.12.13
申请号 US201213589099 申请日期 2012.08.18
申请人 ROBINSON MATTHEW R.;VAN DUREN JEROEN K. J.;LEIDHOLM CRAIG;NANOSOLAR, INC. 发明人 ROBINSON MATTHEW R.;VAN DUREN JEROEN K. J.;LEIDHOLM CRAIG
分类号 H01L31/18 主分类号 H01L31/18
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