发明名称 PHOTOMASK AND MANUFACTURING METHOD FOR THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a photomask and a manufacturing method for the same, that can suppress leakage light and achieve high dimensional accuracy and high positional accuracy. <P>SOLUTION: A photomask includes: a device pattern formed on a first region of a transparent substrate; a peripheral pattern formed on a second region of the transparent substrate; and a modification layer formed within the transparent substrate in a region provided with the peripheral pattern, and making the transmittance of a light-transmitting part of the peripheral pattern relative to exposure light used for light-exposing the device pattern on a wafer lower than the transmittance of a light-transmitting part of the device pattern relative to the exposure light. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012237869(A) 申请公布日期 2012.12.06
申请号 JP20110106643 申请日期 2011.05.11
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 ITO SUSUMU
分类号 G03F1/60 主分类号 G03F1/60
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