| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an Si ingot crystal which can grow largely the Si ingot crystal in growing in a melt, sufficiently decreases strain, and exhibits a good production efficiency when the Si ingot crystal is manufactured. <P>SOLUTION: The growth of the Si ingot crystal in the melt in a crucible includes: a first step, wherein a nucleus is formed by using the Si seed crystal in the neighborhood of the surface of the Si melt with a temperature distribution in which the lower part becomes higher temperature than the temperature of the upper part in the melt, and the ingot crystal is made to grow along the surface of the Si melt or toward the inner part from the Si seed crystal; a second step wherein a part of the grown ingot crystal is pulled up from the inside of the melt so that it does not separate from the melt; and a third step wherein the ingot crystal is successively made to grow along the surface of the Si melt or toward the inner part from the crystal remaining in the melt, and the ingot crystal is made to grow by repeating successively the second step and the third step of a plurality of times. <P>COPYRIGHT: (C)2013,JPO&INPIT |
