发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device including a logic circuit capable of decreasing a leakage current occurred during a standby state is provided. The semiconductor device includes a power supply portion for supplying a first operation voltage or a second operation voltage smaller than the first operation voltage; a P-type low-threshold transistor Tp for receiving the first or the second operation voltage from the power supply portion; and a N-type transistor Tn connected between the transistor Tp and a base potential. The transistors Tp, Tn construct a logic circuit. The power supply portion supplies the first operation voltage to the source of the transistor Tp in the enable state, and supplies the second operation voltage in a standby state. The second operation voltage is set so that voltage amplitude between gate and source of each transistor Tp, Tn is larger than the threshold value of the transistors Tp, Tn.
申请公布号 US2012287712(A1) 申请公布日期 2012.11.15
申请号 US201113303153 申请日期 2011.11.23
申请人 MURAKAMI HIROKI;WINBOND ELECTRONICS CORP. 发明人 MURAKAMI HIROKI
分类号 G11C16/04;G11C5/06;H03K19/00;H03K19/096;H03K19/20 主分类号 G11C16/04
代理机构 代理人
主权项
地址